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Title: Spectroscopic ellipsometry of homoepitaxial diamond multilayers and delta-doped structures

The optimization of diamond-based unipolar electronic devices such as pseudo-vertical Schottky diodes or delta-doped field effect transistors relies in part on the sequential growth of nominally undoped (p{sup –}) and heavily boron doped (p{sup ++}) layers with well-controlled thicknesses and steep interfaces. Optical ellipsometry offers a swift and contactless method to characterize the thickness, roughness, and electronic properties of semiconducting and metallic diamond layers. We report ellipsometric studies carried out on delta-doped structures and other epitaxial multilayers with various boron concentrations and thicknesses (down to the nanometer range). The results are compared with Secondary Ion Mass Spectroscopy and transport measurements.
Authors:
; ; ;  [1] ;  [2]
  1. Univ. Grenoble Alpes, Inst. NEEL, F-38042 Grenoble (France)
  2. (France)
Publication Date:
OSTI Identifier:
22275798
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; DIAMONDS; DOPED MATERIALS; ELLIPSOMETRY; EPITAXY; FIELD EFFECT TRANSISTORS; ION MICROPROBE ANALYSIS; LAYERS; MASS SPECTROSCOPY; SCHOTTKY BARRIER DIODES; THICKNESS