Synthesis and electrical conductivity of multilayer silicene

Journal Article · Mon Jan 13 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4861857· OSTI ID:22275796

Bruhn, T. ^[1]; Capiod, P.; Berthe, M.; Resta, A. ^[2]; De Padova, P. ^[3]; Le Lay, G. ^[2]

---

1. Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin (Germany)
2. Aix-Marseille University, CNRS-CINaM, Campus de Luminy, Case 913, F-13288 Marseille Cedex 09 (France)
3. Instituto di Struttura della Materia, Consiglio Nazionale delle Ricerche - ISM, via Fosso del Cavaliere, 00133 Roma (Italy)

The epitaxial growth and the electrical resistance of multilayer silicene on the Ag(111) surface has been investigated. We show that the atomic structure of the first silicene layer differs from the next layers and that the adsorption of Si induces the formation of extended silicene terraces surrounded by step bunching. Thanks to the controlled contact formation between the tips of a multiple probe scanning tunneling microscope and these extended terraces, a low sheet resistance, albeit much higher than the electrical resistance of the underlying silver substrate, has been measured, advocating for the electrical viability of multilayer silicene.

• OSTI ID: 22275796
• Journal Information: Applied Physics Letters, Vol. 104, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADSORPTION
ELECTRIC CONDUCTIVITY
EPITAXY
LAYERS
SCANNING TUNNELING MICROSCOPY
SILVER
SYNTHESIS