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Title: Synthesis and electrical conductivity of multilayer silicene

The epitaxial growth and the electrical resistance of multilayer silicene on the Ag(111) surface has been investigated. We show that the atomic structure of the first silicene layer differs from the next layers and that the adsorption of Si induces the formation of extended silicene terraces surrounded by step bunching. Thanks to the controlled contact formation between the tips of a multiple probe scanning tunneling microscope and these extended terraces, a low sheet resistance, albeit much higher than the electrical resistance of the underlying silver substrate, has been measured, advocating for the electrical viability of multilayer silicene.
Authors:
;  [1] ; ; ;  [2] ;  [3] ;  [4] ;  [3] ;  [5]
  1. Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin (Germany)
  2. Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520 Département ISEN, 41 bd Vauban, 59046 Lille Cedex (France)
  3. Aix-Marseille University, CNRS-CINaM, Campus de Luminy, Case 913, F-13288 Marseille Cedex 09 (France)
  4. Instituto di Struttura della Materia, Consiglio Nazionale delle Ricerche - ISM, via Fosso del Cavaliere, 00133 Roma (Italy)
  5. (Italy)
Publication Date:
OSTI Identifier:
22275796
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ADSORPTION; ELECTRIC CONDUCTIVITY; EPITAXY; LAYERS; SCANNING TUNNELING MICROSCOPY; SILVER; SYNTHESIS