Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain

Journal Article · Mon Jan 13 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4861854· OSTI ID:22275795

Tuokedaerhan, K.; Natori, K.; Iwai, H. ^[1]; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K. ^[2]

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1. Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)
2. Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan)

Interface properties of La-silicate gate dielectrics on Si substrates with W or nano-sized grain W{sub 2}C gate electrodes have been investigated. A low interface state density of 2.5 × 10{sup 11} cm{sup −2}/eV has been achieved with W{sub 2}C gate electrodes, which is one third of those with W gate electrode. An interface roughness of 0.33 nm with spatial frequency comparable to the grain size of W gate electrode has been observed. Besides, an atomically flat interface of 0.12 nm has been obtained with W{sub 2}C gate electrode. The origin of flat interface may be attributed to the elimination of inhomogeneous stress by grains in metal electrode.

• OSTI ID: 22275795
• Journal Information: Applied Physics Letters, Vol. 104, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIELECTRIC MATERIALS
ELECTRODES
GRAIN SIZE
INTERFACES
NANOSTRUCTURES
SILICATES
STRESSES
TUNGSTEN CARBIDES