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Title: Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2‚ÄČK have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.
Authors:
; ;  [1] ;  [2] ; ;  [1] ; ;  [3]
  1. Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation)
  2. (Russian Federation)
  3. Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22275794
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHARGE CARRIERS; GALLIUM ARSENIDES; GROUND STATES; INDIUM ARSENIDES; OPTICAL PUMPING; PHOTOLUMINESCENCE; QUANTUM WELLS; STIMULATED EMISSION; TIME RESOLUTION