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Title: Computational study on electrical properties of transition metal dichalcogenide field-effect transistors with strained channel

The performance limits of monolayer transition metal dichalcogenide (TMDC) field-effect transistors (FETs) with isotropic biaxial strain were examined with the “top-of-the-barrier” ballistic MOSFET model. Using a first-principle theory, we calculated the band structures and density of states of strained monolayer MoS{sub 2} and WS{sub 2}, and used the results in model calculations. Introducing strain moves the positions of the conduction band minimum and valence band maximum in k-space with resultant variation in the effective mass and population of carriers. Introducing 2% tensile strain into n-type MoS{sub 2} FETs decreases the electron effective mass and, at the same time, increases energy separation between the lower and the higher valleys in the conduction band, resulting in 26% improvement of the ON current up to 1260 A/m. Whereas compressive strain results in complicated effects, −2% strain also improves the ON current by 15%. These results suggest that introducing artificial strain is promising to improve TMDC FET performance.
Authors:
; ;  [1]
  1. Collaborative Research Team Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569 (Japan)
Publication Date:
OSTI Identifier:
22275787
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; EFFECTIVE MASS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRONIC STRUCTURE; ELECTRONS; ENERGY GAP; ENERGY-LEVEL DENSITY; MOLYBDENUM SULFIDES; MOSFET; STRAINS; TUNGSTEN SULFIDES; VALENCE