Structural phase transition and erasable optically memorized effect in layered γ-In{sub 2}Se{sub 3} crystals
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)
We have grown In{sub 2}Se{sub 3} layered-type crystals using chemical vapor transport method with ICl{sub 3} as the transport agent. The as-grown crystals show two different color groups of black shiny for α-phase In{sub 2}Se{sub 3} and red to yellow for γ-phase In{sub 2}Se{sub 3}. High-resolution transmission electron micro scopy verifies crystalline state and structural polytype of the as-grown In{sub 2}Se{sub 3}. The results indicate that the α-In{sub 2}Se{sub 3} crystals present more crystalline states than those of the other amorphous γ-In{sub 2}Se{sub 3}. The amorphous effect on the advancing of optoelectronic property of γ-In{sub 2}Se{sub 3} shows erasable optical-memorized effect in the disordered and polycrystalline γ-In{sub 2}Se{sub 3} layers. Laser-induced photodarkening and annealed-recovery test verified that a reversible structural-phase transition of γ↔α can occur inside the γ-In{sub 2}Se{sub 3}. Thermoreflectance and Raman scattering measurements are carried out to identify the inter-phase transformation of the γ-In{sub 2}Se{sub 3} polycrystals using different heat treatments. Direct band gaps and Raman vibration modes for the γ- and α-In{sub 2}Se{sub 3} crystalline phases are, respectively, characterized and identified. The character of γ↔α inter-phase transition promotes feasible optical and optoelectronic applications of the γ-In{sub 2}Se{sub 3} material in optical memory, optics, and solar-energy devices.
- OSTI ID:
- 22275773
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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