skip to main content

Title: Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons

The effect of annealing on the magnetoelectrical properties of proton-irradiated micro-Hall sensors at an energy of 380 keV and very high proton fluences was studied. Recovery of the electron mobility and a decrease in the sheet resistance of the annealed micro-Hall sensors, as well as an enhancement in their magnetic sensitivity were reported. Trap removal and an improvement in the crystal quality by removing defects were confirmed through current–voltage measurements and Raman spectroscopy, respectively.
Authors:
; ;  [1] ;  [2] ; ;  [1] ;  [3] ; ;  [4]
  1. Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)
  2. Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)
  3. (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)
  4. Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), 1233 Watanuki-cho, Takasaki, Gunma 370-1292 (Japan)
Publication Date:
OSTI Identifier:
22275767
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ELECTRON MOBILITY; GALLIUM NITRIDES; HALL EFFECT; PROTONS; RAMAN SPECTROSCOPY; SENSORS