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Title: Gate-tunable gigantic lattice deformation in VO{sub 2}

We examined the impact of electric field on crystal lattice of vanadium dioxide (VO{sub 2}) in a field-effect transistor geometry by in-situ synchrotron x-ray diffraction measurements. Whereas the c-axis lattice parameter of VO{sub 2} decreases through the thermally induced insulator-to-metal phase transition, the gate-induced metallization was found to result in a significant increase of the c-axis length by almost 1% from that of the thermally stabilized insulating state. We also found that this gate-induced gigantic lattice deformation occurs even at the thermally stabilized metallic state, enabling dynamic control of c-axis lattice parameter by more than 1% at room temperature.
Authors:
;  [1] ;  [1] ;  [2] ; ; ;  [3] ;  [4] ; ; ;  [5] ;  [3] ;  [2] ; ; ;  [1] ;  [2] ;  [1] ;  [2] ;  [2]
  1. RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan)
  2. (Japan)
  3. RIKEN SPring-8 Center, Hyogo 679-5148 (Japan)
  4. National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8562 (Japan)
  5. Japan Synchrotron Radiation Research Institute, SPring-8, Hyogo 679-5198 (Japan)
Publication Date:
OSTI Identifier:
22275766
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL LATTICES; DEFORMATION; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; LATTICE PARAMETERS; PHASE TRANSFORMATIONS; TEMPERATURE RANGE 0273-0400 K; VANADIUM OXIDES; X-RAY DIFFRACTION