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Title: Thickness dependent low-frequency noise characteristics of a-InZnO thin-film transistors under light illumination

The influence of illumination on the electrical characteristics of amorphous indium–zinc oxide (a-IZO) thin-film transistors (TFTs) has been investigated. The electrical properties are found to depend significantly on the active thickness (T{sub IZO}) of the a-IZO TFT. The active thickness is seen to play a major role in the carrier transport mechanism. Based on the carrier fluctuation model, the low-frequency noise (LFN) characteristics of a-IZO devices of varying thicknesses were evaluated before as well as after illumination. Similar to the results of DC and capacitance–voltage (C–V) measurements, the LFN characteristics too show that the light-induced carrier transport becomes significantly enhanced for relatively thick (T{sub IZO} ≥ 60 nm) a-IZO devices.
Authors:
 [1] ;  [2] ;  [3]
  1. Semiconductor Device Laboratory, Samsung Electronics Corporation, Gyeonggi 449-712 (Korea, Republic of)
  2. Department of Applied Physics, Korea University, 2511 Sejongro, Sejong 339-700 (Korea, Republic of)
  3. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22275764
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIERS; ELECTRICAL PROPERTIES; ILLUMINANCE; INDIUM; OXIDES; THIN FILMS; TRANSISTORS; ZINC