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Title: Property transformation of graphene with Al{sub 2}O{sub 3} films deposited directly by atomic layer deposition

Al{sub 2}O{sub 3} films are deposited directly onto graphene by H{sub 2}O-based atomic layer deposition (ALD), and the films are pinhole-free and continuously cover the graphene surface. The growth process of Al{sub 2}O{sub 3} films does not introduce any detective defects in graphene, suppresses the hysteresis effect and tunes the graphene doping to n-type. The self-cleaning of ALD growth process, together with the physically absorbed H{sub 2}O and oxygen-deficient ALD environment consumes OH{sup −} bonds, suppresses the p-doping of graphene, shifts Dirac point to negative gate bias and enhances the electron mobility.
Authors:
; ; ;  [1] ;  [2] ; ;  [1] ;  [3]
  1. State Key Laboratory of Functional Materials for Informatics, SIMIT, Chinese Academy of Sciences, Shanghai 200050 (China)
  2. (China)
  3. University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States)
Publication Date:
OSTI Identifier:
22275762
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; CRYSTAL GROWTH; DEPOSITS; ELECTRON MOBILITY; GRAPHENE; THIN FILMS; WATER