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Title: Growth and transport properties of epitaxial lattice matched half Heusler CoTiSb/InAlAs/InP(001) heterostructures

We demonstrate the integration of the lattice matched single crystal epitaxial Half Heusler compound CoTiSb with In{sub 0.52}Al{sub 0.48}As/InP(001) heterostructures using molecular beam epitaxy. CoTiSb belongs to the subset of Half Heusler compounds that is expected to be semiconducting, despite being composed entirely of metallic constituents. The lattice matching and epitaxial alignment of the CoTiSb films were confirmed by reflection high energy electron diffraction and X-ray diffraction. Temperature dependent transport measurements indicate semiconducting-like behavior, with a room temperature Hall mobility of 530 cm{sup 2}/Vs and background Hall carrier density of 9.0 × 10{sup 17} cm{sup −3}, which is comparable to n-Si with similar carrier density. Below 100 K, the films show a large negative magnetoresistance, and possible origins of this negative magnetoresistance are discussed.
Authors:
 [1] ;  [2] ;  [3] ;  [1] ;  [4]
  1. Materials Department, University of California, Santa Barbara, California 93106 (United States)
  2. Nanometer Structure Consortium (nmC-LU), Department of Physics, Lund University, Lund S-221 00 (Sweden)
  3. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22275760
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER DENSITY; ELECTRON DIFFRACTION; INDIUM PHOSPHIDES; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; X-RAY DIFFRACTION