skip to main content

SciTech ConnectSciTech Connect

Title: Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density.
Authors:
; ; ;  [1] ;  [2] ; ;  [3] ;  [4] ;  [1] ;  [5]
  1. School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006 (Australia)
  2. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Perth, WA 6009 (Australia)
  3. Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)
  4. Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD 4072 (Australia)
  5. (Australia)
Publication Date:
OSTI Identifier:
22275759
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DIFFUSION; DROPLETS; EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; ORGANOMETALLIC COMPOUNDS; QUANTUM DOTS; SEMICONDUCTOR MATERIALS