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Title: Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy

The early stages of InGaN/GaN quantum well growth for In-reduced conditions have been investigated for varying thickness and composition of the wells. The structures were studied by monochromated scanning transmission electron microscopy–valence electron energy loss spectroscopy spectrum imaging at high spatial resolution. It is found that beyond a critical well thickness and composition, quantum dots (width >20 nm) are formed inside the well. These are buried by compositionally graded InGaN, which is formed as GaN is grown while residual In is incorporated into the growing structure. It is proposed that these dots act as carrier localization centers inside the quantum wells.
Authors:
; ; ;  [1] ; ; ;  [2]
  1. Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)
  2. Semiconductor Materials Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)
Publication Date:
OSTI Identifier:
22275752
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL GROWTH; ELECTRON SPECTRA; ELECTRONS; ENERGY-LOSS SPECTROSCOPY; GALLIUM NITRIDES; INDIUM COMPOUNDS; INTERFACES; QUANTUM DOTS; QUANTUM WELLS; SCANNING ELECTRON MICROSCOPY; SPATIAL RESOLUTION; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; VALENCE