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Title: Current transport and thermoelectric properties of very high power factor Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) devices

The current transport and thermoelectric properties of Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) heterostructures with Fe{sub 3}O{sub 4} thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300 K. We observe a sharp drop of the in-plane resistivity at 200 K due to the onset of conduction along the Si/SiO{sub 2} interface related to tunneling of electrons from the Fe{sub 3}O{sub 4} into the accumulation layer of holes at the Si/SiO{sub 2} interface, whose existence was confirmed by capacitance-voltage measurements and a two band analysis of the Hall effect. This is accompanied by a large increase of the Seebeck coefficient reaching +1000 μV/K at 300 K that is related to holes in the p-type Si(001) and gives a power factor of 70 mW/K{sup 2}m when the Fe{sub 3}O{sub 4} layer thickness is reduced down to 150 nm. We show that most of the current flows in the Fe{sub 3}O{sub 4} layer at 300 K, while the Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) heterostructures behave like tunneling p-n junctions in the transverse direction.
Authors:
; ;  [1] ;  [2] ; ;  [3]
  1. Nanotechnology Research Center (NRC) and Department of Mechanical and Manufacturing Engineering, School of Engineering, University of Cyprus, 75 Kallipoleos, P.O. Box 20537, Nicosia 1678 (Cyprus)
  2. Department of Materials Science and Technology, University of Crete, P.O. Box 2208, Heraklion, Crete 710 03 (Greece)
  3. Department of Physics, University of Lisbon and ICEMS, Campo Grande Ed. C8, Lisbon 1749-016 (Portugal)
Publication Date:
OSTI Identifier:
22275748
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; ELECTRIC CURRENTS; ELECTRONS; HALL EFFECT; HETEROJUNCTIONS; HOLES; INTERFACES; IRON OXIDES; LAYERS; P-N JUNCTIONS; POWER FACTOR; SILICON; SILICON OXIDES; THERMOELECTRIC PROPERTIES; TUNNEL EFFECT