Improved lateral photovoltaic effect of Ti and carbon films by interface modification with single-walled carbon nanotubes
- The State Key Laboratory on Fiber Optic Local Area Communication Networks and Advanced Optical Communication Systems, Department of Physics and Astronomy, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Shanghai Jiao Tong University, 800 Dongchuan Rd., Shanghai 200240 (China)
An efficiently improved lateral photovoltaic effect (LPE) has been successfully observed in Ti/Si and amorphous carbon (a-C) film/Si structures by introducing single-walled carbon nanotubes (SWNTs) as modifying interface instead of native SiO{sub 2} layer grown on Si substrate. The largest lateral photovoltage (LPV) position sensitivity achieved is 67.02 mV/mm for the Ti/Si system and 2.23 mV/mm for the a-C/Si system. This corresponds to an improvement of 40% for the Ti/Si system and 2600% for the a-C/Si system. Besides, the SWNTs modified interface also induced a well-marked shift of optimal film thickness in both materials. An additional novel phenomenon is that the directly observed LPV is much larger in SWNTs/Si system compared to the improved a-C/SWNTs/Si structure. A mechanism based on the change of interface states is given to interpret these results, which not only suggests a new common modulation method for LPE, but also a new potential application of SWNTs for photo-electronic device.
- OSTI ID:
- 22275737
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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