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Title: Ultrafast carrier dynamics in CuInS{sub 2} quantum dots

The ultrafast carrier dynamics in CuInS{sub 2} (CIS) quantum dots (QDs) was studied by means of femtosecond transient absorption (TA) spectroscopy. The size-dependent 1S transition energy determined from bleaching spectra is in agreement with that calculated on the finite-depth-well model in the effective mass approximation. The TA bleaching comes from filling of electron quantized levels, allowing us to know the dynamics of the 1S electron in CIS QDs. The sub-100-ps electron trapping at surface defects in bare QDs accelerates with decreasing QD size, while is effectively suppressed in well-passivated CIS/ZnS core/shell QDs.
Authors:
 [1] ;  [2] ;  [2] ;  [3] ;  [4] ;  [2] ; ;  [1] ;  [4]
  1. Institute of Physics, University of Tsukuba, Tsukuba 305-8571 (Japan)
  2. (China)
  3. College of Mechanical and Electrical Engineering, Wenzhou University, Wenzhou 325035 (China)
  4. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)
Publication Date:
OSTI Identifier:
22275732
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; COPPER SULFIDES; ELECTRONS; INDIUM SULFIDES; QUANTUM DOTS; ZINC SULFIDES