Ultrafast carrier dynamics in CuInS{sub 2} quantum dots

Journal Article · Mon Jan 13 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4862274· OSTI ID:22275732

Sun, Jianhui ^[1]; Zhu, Dehua ^[2]; Zhao, Jialong ^[3]; Ikezawa, Michio; Masumoto, Yasuaki ^[1]; Wang, Xiuying ^[3]

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1. Institute of Physics, University of Tsukuba, Tsukuba 305-8571 (Japan)
2. College of Mechanical and Electrical Engineering, Wenzhou University, Wenzhou 325035 (China)
3. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

The ultrafast carrier dynamics in CuInS{sub 2} (CIS) quantum dots (QDs) was studied by means of femtosecond transient absorption (TA) spectroscopy. The size-dependent 1S transition energy determined from bleaching spectra is in agreement with that calculated on the finite-depth-well model in the effective mass approximation. The TA bleaching comes from filling of electron quantized levels, allowing us to know the dynamics of the 1S electron in CIS QDs. The sub-100-ps electron trapping at surface defects in bare QDs accelerates with decreasing QD size, while is effectively suppressed in well-passivated CIS/ZnS core/shell QDs.

• OSTI ID: 22275732
• Journal Information: Applied Physics Letters, Vol. 104, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
COPPER SULFIDES
ELECTRONS
INDIUM SULFIDES
QUANTUM DOTS
ZINC SULFIDES