Dispersion retrieval from multi-level ultra-deep reactive-ion-etched microstructures for terahertz slow-wave circuits
- Samsung Advanced Institute of Technology, Yongin 446-712 (Korea, Republic of)
- Department of Physics, Hankuk University of Foreign Studies, Yongin 449-791 (Korea, Republic of)
- Calabazas Creek Research, Inc., San Mateo, California 94404-1010 (United States)
A multi-level microstructure is proposed for terahertz slow-wave circuits, with dispersion relation retrieved by scattering parameter measurements. The measured return loss shows strong resonances above the cutoff with negligible phase shifts compared with finite element analysis. Splitting the circuit into multi levels enables a low aspect ratio configuration that alleviates the loading effect of deep-reactive-ion etching on silicon wafers. This makes it easier to achieve flat-etched bottom and smooth sidewall profiles. The dispersion retrieved from the measurement, therefore, corresponds well to the theoretical estimation. The result provides a straightforward way to the precise determination of dispersions in terahertz vacuum electronics.
- OSTI ID:
- 22275716
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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