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Title: Lateral carrier diffusion and current gain in terahertz InGaAs/InP double-heterojunction bipolar transistors

The DC current gain in In{sub 0.53}Ga{sub 0.47}As/InP double-heterojunction bipolar transistors is computed based on a drift-diffusion model, and is compared with experimental data. Even in the absence of other scaling effects, lateral diffusion of electrons to the base Ohmic contacts causes a rapid reduction in DC current gain as the emitter junction width and emitter-base contact spacing are reduced. The simulation and experimental data are compared in order to examine the effect of carrier lateral diffusion on current gain. The impact on current gain due to device scaling and approaches to increase current gain are discussed.
Authors:
; ; ;  [1]
  1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
Publication Date:
OSTI Identifier:
22275710
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; DIFFUSION; ELECTRIC CURRENTS; GAIN; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; THZ RANGE; TRANSISTORS