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Title: All-metallic electrically gated 2H-TaSe{sub 2} thin-film switches and logic circuits

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe{sub 2} were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe{sub 2}–Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.
Authors:
; ;  [1] ; ;  [2] ; ;  [3] ; ;  [4] ;  [1] ;  [5] ;  [1] ;  [5]
  1. Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States)
  2. Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States)
  3. Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States)
  4. Laboratory for Terascale and Terahertz Electronics, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States)
  5. (United States)
Publication Date:
OSTI Identifier:
22275705
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CONDUCTIVITY; FABRICATION; GOLD; LOGIC CIRCUITS; MONOCRYSTALS; NONLINEAR PROBLEMS; SEMICONDUCTOR SWITCHES; TANTALUM SELENIDES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TITANIUM; VAN DER WAALS FORCES