Structure and interface chemistry of MoO{sub 3} back contacts in Cu(In,Ga)Se{sub 2} thin film solar cells

Simchi, Hamed; Shafarman, William N.; McCandless, Brian E.; Meng, T.

doi:10.1063/1.4862404

Title: Structure and interface chemistry of MoO{sub 3} back contacts in Cu(In,Ga)Se{sub 2} thin film solar cells

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Abstract

Molybdenum oxide (MoO{sub 3}) is considered as a possible primary back contact for Cu(InGa)Se{sub 2} thin film solar cells for its potential as a transparent back contact for superstrate and bifacial devices. MoO{sub 3} films were deposited on Mo or ITO-coated soda lime glass substrates by reactive rf sputtering in an ambient of Ar + O{sub 2} with O{sub 2}/(O{sub 2} + Ar) = 35% on which Cu(In{sub 0.7}Ga{sub 0.3})Se{sub 2} alloy absorber layers were deposited using multi-source elemental evaporation. Scanning Electron Microscopy studies showed uniform coverage of the as-deposited MoO{sub 3} layer and good adhesion was obtained in all cases. X-ray Photoelectron Spectroscopy depth profile analysis showed that MoSe{sub 2} was not formed at the Cu(InGa)Se{sub 2} interface with either the Mo-MoO{sub 3} or ITO-MoO{sub 3} back contacts. Determination of the valence band offsets showed that the MoO{sub 3} layer at the interface changes the energy band alignment with Cu(InGa)Se{sub 2}, producing a primary contact with lower valence band offset than ITO. Cu(In,Ga)Se{sub 2} thin film solar cells prepared using an as-deposited Mo-MoO{sub 3} back contact yielded a best conversion efficiency of 14%, with V{sub OC} = 647 mV, J{sub SC} = 28.4 mA/cm{sup 2}, and FF = 78.1%. Cells with ITO-MoO{sub 3} back contact showed a best efficiency of 12%, with V{submore »« less

Authors:

Simchi, Hamed; Shafarman, William N. ^[1]; McCandless, Brian E.; Meng, T. ^[1]

Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716 (United States)

Publication Date:: Tue Jan 21 00:00:00 EST 2014

OSTI Identifier:: 22275699

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 115; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COPPER SELENIDES; ENERGY EFFICIENCY; EVAPORATION; GALLIUM SELENIDES; INDIUM SELENIDES; INTERFACES; LAYERS; MOLYBDENUM OXIDES; MOLYBDENUM SELENIDES; SCANNING ELECTRON MICROSCOPY; SOLAR CELLS; SPUTTERING; SUBSTRATES; THIN FILMS; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats


                    Simchi, Hamed, Shafarman, William N., Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, McCandless, Brian E., and Meng, T. Structure and interface chemistry of MoO{sub 3} back contacts in Cu(In,Ga)Se{sub 2} thin film solar cells.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4862404.

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                    Simchi, Hamed, Shafarman, William N., Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, McCandless, Brian E., & Meng, T. Structure and interface chemistry of MoO{sub 3} back contacts in Cu(In,Ga)Se{sub 2} thin film solar cells.  United States.  https://doi.org/10.1063/1.4862404

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                    Simchi, Hamed, Shafarman, William N., Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, McCandless, Brian E., and Meng, T. 2014.  
        "Structure and interface chemistry of MoO{sub 3} back contacts in Cu(In,Ga)Se{sub 2} thin film solar cells".  United States.  https://doi.org/10.1063/1.4862404.

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@article{osti_22275699,

  title        = {Structure and interface chemistry of MoO{sub 3} back contacts in Cu(In,Ga)Se{sub 2} thin film solar cells},

  author       = {Simchi, Hamed and Shafarman, William N. and Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716 and McCandless, Brian E. and Meng, T.},

  abstractNote = {Molybdenum oxide (MoO{sub 3}) is considered as a possible primary back contact for Cu(InGa)Se{sub 2} thin film solar cells for its potential as a transparent back contact for superstrate and bifacial devices. MoO{sub 3} films were deposited on Mo or ITO-coated soda lime glass substrates by reactive rf sputtering in an ambient of Ar + O{sub 2} with O{sub 2}/(O{sub 2} + Ar) = 35% on which Cu(In{sub 0.7}Ga{sub 0.3})Se{sub 2} alloy absorber layers were deposited using multi-source elemental evaporation. Scanning Electron Microscopy studies showed uniform coverage of the as-deposited MoO{sub 3} layer and good adhesion was obtained in all cases. X-ray Photoelectron Spectroscopy depth profile analysis showed that MoSe{sub 2} was not formed at the Cu(InGa)Se{sub 2} interface with either the Mo-MoO{sub 3} or ITO-MoO{sub 3} back contacts. Determination of the valence band offsets showed that the MoO{sub 3} layer at the interface changes the energy band alignment with Cu(InGa)Se{sub 2}, producing a primary contact with lower valence band offset than ITO. Cu(In,Ga)Se{sub 2} thin film solar cells prepared using an as-deposited Mo-MoO{sub 3} back contact yielded a best conversion efficiency of 14%, with V{sub OC} = 647 mV, J{sub SC} = 28.4 mA/cm{sup 2}, and FF = 78.1%. Cells with ITO-MoO{sub 3} back contact showed a best efficiency of 12%, with V{sub OC} = 642 mV, J{sub SC} = 26.8 mA/cm{sup 2}, and FF = 69.2%.},

  doi          = {10.1063/1.4862404},

  url          = {https://www.osti.gov/biblio/22275699},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 3,

  volume       = 115,

  place        = {United States},

  year         = {Tue Jan 21 00:00:00 EST 2014},

  month        = {Tue Jan 21 00:00:00 EST 2014}

}

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