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Title: Effect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells

The effect of the position of InAs quantum dots (QD) within the intrinsic region of pin-GaAs solar cells is reported. Simulations suggest placing the QDs in regions of reduced recombination enables a recovery of open-circuit voltage (V{sub OC}). Devices with the QDs placed in the center and near the doped regions of a pin-GaAs solar cell were experimentally investigated. While the V{sub OC} of the emitter-shifted device was degraded, the center and base-shifted devices exhibited V{sub OC} comparable to the baseline structure. This asymmetry is attributed to background doping which modifies the recombination profile and must be considered when optimizing QD placement.
Authors:
; ; ; ;  [1]
  1. NanoPower Research Laboratories, Rochester Institute of Technology, Rochester, New York (United States)
Publication Date:
OSTI Identifier:
22275693
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOPED MATERIALS; GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM DOTS; SOLAR CELLS