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Title: Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10{sup −3} Ω cm after treatment, and then it increases to 7.92 × 10{sup −2} Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm{sup 2}/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300 °C annealing.
Authors:
 [1] ;  [2] ; ; ; ; ;  [3] ; ;  [1]
  1. Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)
  2. (Korea, Republic of)
  3. LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22275690
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; DOPED MATERIALS; GALLIUM; INDIUM; THIN FILMS; TRANSISTORS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES