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Title: Dislocation engineering in SiGe on periodic and aperiodic Si(001) templates studied by fast scanning X-ray nanodiffraction

Fast-scanning X-ray nanodiffraction microscopy is used to directly visualize the misfit dislocation network in a SiGe film deposited on a pit-patterned Si substrate at the beginning of plastic relaxation. X-ray real-space diffracted intensity maps are compared to topographic atomic force microscopy images, in which crosshatch lines can be seen. The change in intensity distribution as a function of the incidence angle shows localized variations in strain within the SiGe film. These variations, which reflect the order imposed by the substrate pattern, are attributed to the presence of both bunches of misfit dislocations and defect-free regions.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4] ; ;  [3]
  1. L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy)
  2. IFN-CNR, L-NESS, via Anzani 42, 22100 Como (Italy)
  3. ID01/ESRF, BP 220, F-38043 Grenoble Cedex (France)
  4. (France)
Publication Date:
OSTI Identifier:
22275688
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; DISLOCATIONS; GERMANIUM SILICIDES; INCIDENCE ANGLE; PERIODICITY; SUBSTRATES