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Title: Insight into the photoelectron angular dependent energy distribution of negative-electron-affinity InP photocathodes

Energy distribution and angular distribution of the photoelectrons from InP photocathodes are investigated using a precise Monte Carlo model. It is found that Γ-valley electrons contribute to the first peak of the energy distribution curve, but the second peak is contributed by both Γ-valley and L-valley electrons rather than only L-valley electrons. L valley electrons are shown to have a smaller angular spread than Γ-valley electrons, which is attributed to the much higher potential energy of L-valley minimum. The further simulation indicates that the performance of InP photocathodes can be improved by increasing the hole concentration or decreasing the temperature, but the activation layer thickness variation only has very slight influence on either energy or angular distribution.
Authors:
; ; ; ;  [1] ;  [2]
  1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
  2. Materials Sciences Division, Lawrence Berkeley National Laboratory, One Cyclotron Road, Mail Stop 50F, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
22275686
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANGULAR DISTRIBUTION; ENERGY SPECTRA; INDIUM PHOSPHIDES; LAYERS; MONTE CARLO METHOD; PHOTOCATHODES