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Title: Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-κ gate dielectric. HetJ pTFET exhibited drive current of 35 μA/μm in comparison to homJ pTFET, which exhibited drive current of 0.3 μA/μm at V{sub DS} = −0.5 V under DC biasing conditions. Additionally, with pulsing of 1 μs gate voltage, hetJ pTFET exhibited enhanced drive current of 85 μA/μm at V{sub DS} = −0.5 V, which is the highest reported in the category of III-V pTFET. Detailed device characterization was performed through analysis of the capacitance-voltage characteristics, pulsed current-voltage characteristics, and x-ray diffraction studies.
Authors:
; ; ;  [1] ; ;  [2] ; ;  [3]
  1. Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  2. Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)
  3. Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47906 (United States)
Publication Date:
OSTI Identifier:
22275667
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; COMPARATIVE EVALUATIONS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FABRICATION; FIELD EFFECT TRANSISTORS; GALLIUM ANTIMONIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; LAYERS; TUNNEL EFFECT; X-RAY DIFFRACTION