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Title: Electronic stopping powers for heavy ions in SiC and SiO{sub 2}

Accurate information on electronic stopping power is fundamental for broad advances in materials science, electronic industry, space exploration, and sustainable energy technologies. In the case of slow heavy ions in light targets, current codes and models provide significantly inconsistent predictions, among which the Stopping and Range of Ions in Matter (SRIM) code is the most commonly used one. Experimental evidence, however, has demonstrated considerable errors in the predicted ion and damage profiles based on SRIM stopping powers. In this work, electronic stopping powers for Cl, Br, I, and Au ions are experimentally determined in two important functional materials, SiC and SiO{sub 2}, based on a single ion technique, and new electronic stopping power values are derived over the energy regime from 0 to 15 MeV, where large deviations from the SRIM predictions are observed. As an experimental validation, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) are utilized to measure the depth profiles of implanted Au ions in SiC for energies from 700 keV to 15 MeV. The measured ion distributions by both RBS and SIMS are considerably deeper than the SRIM predictions, but agree well with predictions based on our derived stopping powers.
Authors:
;  [1] ; ;  [1] ;  [2] ;  [3] ;  [4] ;  [5]
  1. Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)
  2. (United States)
  3. Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States)
  4. Luxel Corporation, Friday Harbor, Washington 98250 (United States)
  5. State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China)
Publication Date:
OSTI Identifier:
22275657
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BROMINE IONS; CHLORINE IONS; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; GOLD IONS; IODINE IONS; ION IMPLANTATION; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; S CODES; SILICON CARBIDES; SILICON OXIDES; STOPPING POWER