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Title: Time-integrated photoluminescence and pump-probe reflection spectroscopy of Si doped InN thin films

Temperature and excitation power dependent time-integrated photoluminescence of Si doped InN thin films are investigated. Photoluminescence (PL) spectra at low temperatures are described by single emission peak ensued due to “free-to-bound” recombination; whereas PL spectra at higher temperatures above 150 K are characterized by both “band-to-band” and “free-to-bound” transition. Carrier dynamics of Si doped InN thin films is studied using pump-probe reflection spectroscopy at room temperature. The hot electron cooling process is well described by electron-electron scattering. The dependence of the hot electron cooling rate on total electron density shows sublinear to linear behavior with increase of background electron density. The variation of the carrier recombination lifetime with total electron density implicates the dominance of the defect-related nonradiative recombination channel over other recombination processes.
Authors:
; ; ;  [1]
  1. Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China)
Publication Date:
OSTI Identifier:
22275642
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; DOPED MATERIALS; ELECTRON COOLING; ELECTRON DENSITY; EMISSION SPECTRA; EMISSION SPECTROSCOPY; EXCITATION; INDIUM NITRIDES; PHOTOLUMINESCENCE; RECOMBINATION; SILICON COMPOUNDS; SPECTRAL REFLECTANCE; TEMPERATURE DEPENDENCE; THIN FILMS