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Title: The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.
Authors:
; ; ; ; ;  [1]
  1. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an (China)
Publication Date:
OSTI Identifier:
22275629
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CADMIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; EXCITATION; IONIZATION; LEAKAGE CURRENT; PERFORMANCE; RADIATION DETECTION; SEMICONDUCTOR DETECTORS; TEMPERATURE DEPENDENCE; TRAPS; VISIBLE RADIATION; ZINC TELLURIDES