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Title: Reactive ZnO/Ti/ZnO interfaces studied by hard x-ray photoelectron spectroscopy

The chemistry and intermixing at buried interfaces in sputter deposited ZnO/Ti/ZnO thin layers were studied by hard x-ray photoelectron spectroscopy. The long mean free path of the photoelectrons allowed for detailed studies of the oxidation state, band bending effects, and intrinsic doping of the buried interfaces. Oxidation of the Ti layer was observed when ZnO was deposited on top. When Ti is deposited onto ZnO, Zn Auger peaks acquire a metallic character indicating a strong reduction of ZnO at the interface. Annealing of the stack at 200 °C results in further reduction of ZnO and oxidation of Ti. Above 300 °C, oxygen transport from the bulk of the ZnO layer takes place, leading to re-oxidation of ZnO at the interface and further oxidation of Ti layer. Heating above 500 °C leads to an intermixing of the layers and the formation of a Zn{sub x}TiO{sub y} compound.
Authors:
; ; ;  [1] ; ; ;  [2] ;  [3]
  1. Department of Physics and Astronomy, Uppsala University, Box 516, 75120 Uppsala (Sweden)
  2. Unité Mixte CNRS/Sain-Gobain Recherche, 39 Quai Lucien Lefranc, 93303 Aubervilliers (France)
  3. Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Str. 15, D-12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22275628
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; HARD X RADIATION; INTERFACES; LAYERS; MEAN FREE PATH; OXIDATION; REDUCTION; SPUTTERING; THIN FILMS; TITANIUM; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES