Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al{sub 2}O{sub 3} by plasma-assisted molecular beam epitaxy
- Institute of Physics Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)
We report on plasma-assisted molecular beam epitaxial growth of GaN nanowires (NWs) on Si(111) substrates with a thin amorphous Al{sub 2}O{sub 3} buffer layer deposited by atomic layer deposition. Comparison of nucleation kinetics shows that presence of amorphous Al{sub 2}O{sub 3} buffer significantly enhances spontaneous nucleation of GaN NWs. Slower nucleation was observed on partially amorphous silicon nitride films. No growth of NWs was found on sapphire substrate under the same growth conditions which we explain by a low density of defects on monocrystalline substrate surface where NWs may nucleate. Our finding shows that tuning of substrate microstructure is an efficient tool to control rate of self-induced nucleation of GaN NWs.
- OSTI ID:
- 22275626
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM OXIDES
AMORPHOUS STATE
CRYSTAL GROWTH
CRYSTAL STRUCTURE
GALLIUM NITRIDES
LAYERS
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
NUCLEATION
PLASMA
QUANTUM WIRES
SAPPHIRE
SILICON NITRIDES
SUBSTRATES
THIN FILMS