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Title: Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al{sub 2}O{sub 3} by plasma-assisted molecular beam epitaxy

We report on plasma-assisted molecular beam epitaxial growth of GaN nanowires (NWs) on Si(111) substrates with a thin amorphous Al{sub 2}O{sub 3} buffer layer deposited by atomic layer deposition. Comparison of nucleation kinetics shows that presence of amorphous Al{sub 2}O{sub 3} buffer significantly enhances spontaneous nucleation of GaN NWs. Slower nucleation was observed on partially amorphous silicon nitride films. No growth of NWs was found on sapphire substrate under the same growth conditions which we explain by a low density of defects on monocrystalline substrate surface where NWs may nucleate. Our finding shows that tuning of substrate microstructure is an efficient tool to control rate of self-induced nucleation of GaN NWs.
Authors:
; ; ; ; ; ;  [1]
  1. Institute of Physics Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22275626
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM OXIDES; AMORPHOUS STATE; CRYSTAL GROWTH; CRYSTAL STRUCTURE; GALLIUM NITRIDES; LAYERS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; NUCLEATION; PLASMA; QUANTUM WIRES; SAPPHIRE; SILICON NITRIDES; SUBSTRATES; THIN FILMS