skip to main content

SciTech ConnectSciTech Connect

Title: Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

In this work, a picosecond diode pumped solid state laser and a nanosecond Nd:YAG laser have been used for the annealing and the partial nano-crystallization of an amorphous silicon layer. These experiments were conducted as an alternative/complementary to plasma-enhanced chemical vapor deposition method for fabrication of micromorph tandem solar cell. The laser experimental work was combined with simulations of the annealing process, in terms of temperature distribution evolution, in order to predetermine the optimum annealing conditions. The annealed material was studied, as a function of several annealing parameters (wavelength, pulse duration, fluence), as far as it concerns its structural properties, by X-ray diffraction, SEM, and micro-Raman techniques.
Authors:
; ; ;  [1] ;  [2]
  1. Physics Department, National Technical University of Athens, Heroon Polytechniou 9, 15780 Zographou, Athens (Greece)
  2. Heliosphera SA, Industrial Area of Tripolis, 8th Building Block, 5th Road, GR-221 00 Tripolis (Greece)
Publication Date:
OSTI Identifier:
22275607
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ANNEALING; CHEMICAL VAPOR DEPOSITION; COMPUTERIZED SIMULATION; CRYSTALLIZATION; DIODE-PUMPED SOLID STATE LASERS; LAYERS; NEODYMIUM LASERS; PLASMA; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; SOLAR CELLS; TEMPERATURE DISTRIBUTION; THIN FILMS; X-RAY DIFFRACTION