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Title: Role of dislocation scattering on electron mobility in coalescent epitaxial lateral overgrowth layers of InP

In order to clarify the effects of dislocation scattering on electron transport properties, temperature dependent (15-300‚ÄČK) Hall-effect measurements were applied to the dislocated coalescent and dislocation-free non-coalescent ELO layers of InP prepared by the liquid phase epitaxy. The coalescent ELO layers contain a large number of dislocations, and the non-coalescent ELO layers are dislocation-free. Taking into account, the various electron scattering mechanisms in compound semiconductors, the temperature dependences of electron mobility were analyzed. It is shown that the dislocation scattering based on the charged dislocation line model is dominant transport mechanism in the dislocated coalescent ELO layers at low temperature.
Authors:
 [1]
  1. Department of Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Aramaki Aza Aoba 6-6-11-1020, Sendai 980-8579 (Japan)
Publication Date:
OSTI Identifier:
22275592
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DISLOCATIONS; ELECTRON MOBILITY; ELECTRONS; HALL EFFECT; INDIUM PHOSPHIDES; LAYERS; LIQUID PHASE EPITAXY; SCATTERING; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE