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Title: Cyan laser diode grown by plasma-assisted molecular beam epitaxy

Abstract

We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (Φ{sub N}) during quantum wells (QWs) growth. We found that high Φ{sub N} improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold current density are discussed.

Authors:
; ;  [1]; ; ; ;  [1]
  1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22275586
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; LASERS; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTODIODES; QUANTUM WELLS; THRESHOLD CURRENT; VAPOR PHASE EPITAXY

Citation Formats

Turski, H., E-mail: henryk@unipress.waw.pl, Muziol, G., Wolny, P., Cywiński, G., Grzanka, S., Sawicka, M., Perlin, P., Skierbiszewski, C., and TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw. Cyan laser diode grown by plasma-assisted molecular beam epitaxy. United States: N. p., 2014. Web. doi:10.1063/1.4861655.
Turski, H., E-mail: henryk@unipress.waw.pl, Muziol, G., Wolny, P., Cywiński, G., Grzanka, S., Sawicka, M., Perlin, P., Skierbiszewski, C., & TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw. Cyan laser diode grown by plasma-assisted molecular beam epitaxy. United States. https://doi.org/10.1063/1.4861655
Turski, H., E-mail: henryk@unipress.waw.pl, Muziol, G., Wolny, P., Cywiński, G., Grzanka, S., Sawicka, M., Perlin, P., Skierbiszewski, C., and TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw. 2014. "Cyan laser diode grown by plasma-assisted molecular beam epitaxy". United States. https://doi.org/10.1063/1.4861655.
@article{osti_22275586,
title = {Cyan laser diode grown by plasma-assisted molecular beam epitaxy},
author = {Turski, H., E-mail: henryk@unipress.waw.pl and Muziol, G. and Wolny, P. and Cywiński, G. and Grzanka, S. and Sawicka, M. and Perlin, P. and Skierbiszewski, C. and TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw},
abstractNote = {We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (Φ{sub N}) during quantum wells (QWs) growth. We found that high Φ{sub N} improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold current density are discussed.},
doi = {10.1063/1.4861655},
url = {https://www.osti.gov/biblio/22275586}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 2,
volume = 104,
place = {United States},
year = {Mon Jan 13 00:00:00 EST 2014},
month = {Mon Jan 13 00:00:00 EST 2014}
}