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Title: Electrical response in atomic layer deposited Al:ZnO with varying stack thickness

We report on the effects of stacking of the macrocycles in atomic layer deposited (ALD) Al:ZnO thin films on the structural and electrical properties. There is a large change in the resistivity ranging from as high as 1.19 × 10{sup −3} Ω cm for 760 growth cycles film down to as low as 7.9 × 10{sup −4} Ω cm for the 4000 cycles. The electrical transport demonstrates a transition from a semiconductor behavior at 760 cycles to a metallic behavior in the 4000 cycle, due to an increase in electron scattering as well as increase in the carrier concentration. However, interestingly the carrier concentration sharply increases with increasing macrocycles containing Al and Zn, exhibiting a nearly metal-like behavior in thicker films. We anticipate that the change in Zn-vacancy, V{sub zn}, formation energy is related to the increase in surface area of the ALD precursor deposition plane. The increase in V{sub zn} density allows for more adsorption of Al-precursor into the doped monolayer, showing interesting electrical properties.
Authors:
;  [1]
  1. Center for Materials Research, Norfolk State University, Norfolk, Virginia 23504 (United States)
Publication Date:
OSTI Identifier:
22275578
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; CHARGE CARRIERS; CONCENTRATION RATIO; DEPOSITION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONS; FORMATION HEAT; LAYERS; SEMICONDUCTOR MATERIALS; SURFACE AREA; THICKNESS; THIN FILMS; VACANCIES; ZINC OXIDES