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Title: InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models

Promising predictions are made for III-V tunnel-field-effect transistor (FET), but there is still uncertainty on the parameters used in the band-to-band tunneling models. Therefore, two simulators are calibrated in this paper; the first one uses a semi-classical tunneling model based on Kane's formalism, and the second one is a quantum mechanical simulator implemented with an envelope function formalism. The calibration is done for In{sub 0.53}Ga{sub 0.47}As using several p+/intrinsic/n+ diodes with different intrinsic region thicknesses. The dopant profile is determined by SIMS and capacitance-voltage measurements. Error bars are used based on statistical and systematic uncertainties in the measurement techniques. The obtained parameters are in close agreement with theoretically predicted values and validate the semi-classical and quantum mechanical models. Finally, the models are applied to predict the input characteristics of In{sub 0.53}Ga{sub 0.47}As n- and p-lineTFET, with the n-lineTFET showing competitive performance compared to MOSFET.
Authors:
; ; ; ;  [1] ;  [2] ; ; ; ; ; ;  [1] ; ;  [1] ;  [2]
  1. Imec, Kapeldreef 75, 3001 Heverlee (Belgium)
  2. (Belgium)
Publication Date:
OSTI Identifier:
22275557
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CALIBRATION; CAPACITANCE; COMPARATIVE EVALUATIONS; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; MASS SPECTROSCOPY; MOSFET; QUANTUM MECHANICS; SIMULATORS; TUNNEL DIODES; TUNNEL EFFECT