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Title: Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ∼10{sup 17} cm{sup −3} to (2–5) × 10{sup 14} cm{sup −3}. The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ∼5 × 10{sup 13} cm{sup −3} versus 2.9 × 10{sup 16} cm{sup −3} in the standard samples, with a similar decrease in the electron traps concentration.
Authors:
 [1] ; ; ;  [2] ; ; ;  [3] ;  [3] ;  [4]
  1. National University of Science and Technology MISiS, Leninsky Ave. 4, 119049 Moscow (Russian Federation)
  2. Institute of Rare Metals, B. Tolmachevsky 5, 119017 Moscow (Russian Federation)
  3. Nitride Crystals, Inc., 181E Industry Ct., Ste. B, Deer Park, New York 11729 (United States)
  4. (Russian Federation)
Publication Date:
OSTI Identifier:
22275549
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; CRYSTAL GROWTH; ELECTRICAL PROPERTIES; ELECTRON DENSITY; ELECTRONS; ENERGY SPECTRA; GALLIUM NITRIDES; HOLES; THIN FILMS; TRAPS; VAPOR PHASE EPITAXY