Hydride vapor phase GaN films with reduced density of residual electrons and deep traps
- Institute of Rare Metals, B. Tolmachevsky 5, 119017 Moscow (Russian Federation)
- Nitride Crystals, Inc., 181E Industry Ct., Ste. B, Deer Park, New York 11729 (United States)
Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ∼10{sup 17} cm{sup −3} to (2–5) × 10{sup 14} cm{sup −3}. The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ∼5 × 10{sup 13} cm{sup −3} versus 2.9 × 10{sup 16} cm{sup −3} in the standard samples, with a similar decrease in the electron traps concentration.
- OSTI ID:
- 22275549
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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