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Title: Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

Abstract

Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ∼10{sup 17} cm{sup −3} to (2–5) × 10{sup 14} cm{sup −3}. The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ∼5 × 10{sup 13} cm{sup −3} versus 2.9 × 10{sup 16} cm{sup −3} in the standard samples, with a similar decrease in the electron traps concentration.

Authors:
; ;  [1]; ; ;  [2];  [2]
  1. Institute of Rare Metals, B. Tolmachevsky 5, 119017 Moscow (Russian Federation)
  2. Nitride Crystals, Inc., 181E Industry Ct., Ste. B, Deer Park, New York 11729 (United States)
Publication Date:
OSTI Identifier:
22275549
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; CRYSTAL GROWTH; ELECTRICAL PROPERTIES; ELECTRON DENSITY; ELECTRONS; ENERGY SPECTRA; GALLIUM NITRIDES; HOLES; THIN FILMS; TRAPS; VAPOR PHASE EPITAXY

Citation Formats

Polyakov, A. Y., E-mail: aypolyakov@gmail.com, Smirnov, N. B., Govorkov, A. V., Yugova, T. G., Cox, H., Helava, H., Makarov, Yu., Usikov, A. S., and Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, 49 Kronverkskiy Ave., 197101 Saint Petersburg. Hydride vapor phase GaN films with reduced density of residual electrons and deep traps. United States: N. p., 2014. Web. doi:10.1063/1.4876061.
Polyakov, A. Y., E-mail: aypolyakov@gmail.com, Smirnov, N. B., Govorkov, A. V., Yugova, T. G., Cox, H., Helava, H., Makarov, Yu., Usikov, A. S., & Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, 49 Kronverkskiy Ave., 197101 Saint Petersburg. Hydride vapor phase GaN films with reduced density of residual electrons and deep traps. United States. https://doi.org/10.1063/1.4876061
Polyakov, A. Y., E-mail: aypolyakov@gmail.com, Smirnov, N. B., Govorkov, A. V., Yugova, T. G., Cox, H., Helava, H., Makarov, Yu., Usikov, A. S., and Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, 49 Kronverkskiy Ave., 197101 Saint Petersburg. 2014. "Hydride vapor phase GaN films with reduced density of residual electrons and deep traps". United States. https://doi.org/10.1063/1.4876061.
@article{osti_22275549,
title = {Hydride vapor phase GaN films with reduced density of residual electrons and deep traps},
author = {Polyakov, A. Y., E-mail: aypolyakov@gmail.com and Smirnov, N. B. and Govorkov, A. V. and Yugova, T. G. and Cox, H. and Helava, H. and Makarov, Yu. and Usikov, A. S. and Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, 49 Kronverkskiy Ave., 197101 Saint Petersburg},
abstractNote = {Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ∼10{sup 17} cm{sup −3} to (2–5) × 10{sup 14} cm{sup −3}. The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ∼5 × 10{sup 13} cm{sup −3} versus 2.9 × 10{sup 16} cm{sup −3} in the standard samples, with a similar decrease in the electron traps concentration.},
doi = {10.1063/1.4876061},
url = {https://www.osti.gov/biblio/22275549}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 18,
volume = 115,
place = {United States},
year = {Wed May 14 00:00:00 EDT 2014},
month = {Wed May 14 00:00:00 EDT 2014}
}