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Title: Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.
Authors:
; ; ; ;  [1] ; ;  [2] ;  [3] ; ;  [2] ;  [4]
  1. CEA, LETI, Département Optronique, F-38054 Grenoble (France)
  2. Nanodelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4, Higashi 1-1-1, Tsukuba, Ibaraki 305-8562 (Japan)
  3. (JASRI), Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)
  4. SPring-8, Japan Synchrotron Radiation Institute (JASRI), Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)
Publication Date:
OSTI Identifier:
22275541
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; DEPOSITION; DIFFUSION; DOPED MATERIALS; EMISSION SPECTROSCOPY; GLASS; PHOSPHORUS; PHOTOLUMINESCENCE; QUANTUM WIRES; SPIN; X-RAY SPECTROSCOPY; ZINC OXIDES