Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

Journal Article · Wed May 21 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4876228· OSTI ID:22275541

Bocheux, A.; Robin, I. C.; Bonaimé, J.; Hyot, B.; Feuillet, G. ^[1]; Kolobov, A. V.; Fons, P. ^[2]; Mitrofanov, K. V.; Tominaga, J. ^[2]; Tamenori, Y. ^[3]

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1. CEA, LETI, Département Optronique, F-38054 Grenoble (France)
2. Nanodelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4, Higashi 1-1-1, Tsukuba, Ibaraki 305-8562 (Japan)
3. SPring-8, Japan Synchrotron Radiation Institute (JASRI), Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.

• OSTI ID: 22275541
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION SPECTROSCOPY
DEPOSITION
DIFFUSION
DOPED MATERIALS
EMISSION SPECTROSCOPY
GLASS
PHOSPHORUS
PHOTOLUMINESCENCE
QUANTUM WIRES
SPIN
X-RAY SPECTROSCOPY
ZINC OXIDES