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Title: Photoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layers

The excitonic radiative transitions of InAs{sub x}P{sub 1−x} (x = 0.13 and x = 0.40) alloy epitaxial layers were studied through magnetic field and temperature dependent photoluminescence and time-resolved photoluminescence spectroscopy. While the linewidth and lineshape of the exciton transition for x = 0.40 indicate the presence of alloy broadening due to random anion distribution and the existence of localized exciton states, those of x = 0.13 suggest that this type of compositional disorder is absent in x = 0.13. This localization is further supported by the behavior of the exciton transitions at low temperature and high magnetic fields. InAs{sub 0.4}P{sub 0.6} exhibits anomalous “S-shaped” temperature dependence of the excition emission peak below 100 K as well as linewidth broadening at high magnetic fields due to the compression of the excitonic volume amid compositional fluctuations. Finally, photoluminescence decay patterns suggest that the excitons radiatively relax through two channels, a fast and a slow decay. While the lifetime of the fast decay is comparable for both compositions (∼30 ps), that of the slow decay increases from 206 ps to 427 ps as x increases from 0.13 to 0.40, attributable to carrier migration between the localization states of InAs{sub 0.4}P{sub 0.6}.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [4] ;  [5]
  1. Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States)
  2. National High Magnetic Field Laboratory, Tallahassee, Florida 32310 (United States)
  3. Naval Research Laboratory, Washington, District of Columbia 20375 (United States)
  4. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
  5. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
Publication Date:
OSTI Identifier:
22275535
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANIONS; COMPARATIVE EVALUATIONS; COMPRESSION; EMISSION SPECTROSCOPY; EPITAXY; EXCITONS; FLUCTUATIONS; INDIUM ARSENIDES; LAYERS; LIFETIME; MAGNETIC FIELDS; PHOSPHORUS COMPOUNDS; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE; TIME RESOLUTION