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Title: On the electronic properties of a single dislocation

A detailed knowledge of the electronic properties of individual dislocations is necessary for next generation nanodevices. Dislocations are fundamental crystal defects controlling the growth of different nanostructures (nanowires) or appear during device processing. We present a method to record electric properties of single dislocations in thin silicon layers. Results of measurements on single screw dislocations are shown for the first time. Assuming a cross-section area of the dislocation core of about 1 nm{sup 2}, the current density through a single dislocation is J = 3.8 × 10{sup 12} A/cm{sup 2} corresponding to a resistivity of ρ ≅ 1 × 10{sup −8} Ω cm. This is about eight orders of magnitude lower than the surrounding silicon matrix. The reason of the supermetallic behavior is the high strain in the cores of the dissociated dislocations modifying the local band structure resulting in high conductive carrier channels along defect cores.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Saale) (Germany)
  2. IHP microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)
  3. (Germany)
  4. CIS Research Institute of Microsensorics and Photovoltaics, K.-Zuse-Str. 14, 99099 Erfurt (Germany)
Publication Date:
OSTI Identifier:
22275528
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 19; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE CARRIERS; CROSS SECTIONS; CRYSTAL GROWTH; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; LAYERS; MATRIX MATERIALS; QUANTUM WIRES; SCREW DISLOCATIONS; SILICON; STRAINS