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Title: The impact of argon admixture on the c-axis oriented growth of direct current magnetron sputtered Sc{sub x}Al{sub 1−x}N thin films

The piezoelectric properties of wurtzite aluminium nitride (w-AlN) are enhanced by alloying with scandium (Sc), thus offering superior properties for applications in micro electro-mechanical systems devices. Sc{sub x}Al{sub 1−x}N thin films have been prepared by DC reactive magnetron sputtering on Si (100) substrates from a single target. When targeting a concentration range from x = 0 up to x = 0.15, the preparation conditions have been optimized by varying the Ar/N{sub 2} ratio in the sputtering gas. To incorporate an increasing Sc concentration, a higher Ar/N{sub 2} ratio has to be applied during the deposition process. Hence, the argon concentration in the sputtering gas becomes a crucial parameter for microstructure-related parameters. To determine phase purity, degree of c-axis orientation, lattice parameter, and grain size, the Sc{sub x}Al{sub 1−x}N thin films were investigated by techniques, such as scanning electron microscopy, transmission electron microscopy, and X-ray diffraction.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria)
  2. Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstrasse 8, 1040 Vienna (Austria)
  3. University Service Center for Transmission Electron Microscopy (USTEM), Vienna University of Technology, Wiedner Hauptstrasse 8-10/052, 1040 Vienna (Austria)
  4. Institute of Materials Science and Technology, Vienna University of Technology, Karlsplatz 13, 1040 Vienna (Austria)
Publication Date:
OSTI Identifier:
22275526
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 19; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; ARGON; CONCENTRATION RATIO; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DIRECT CURRENT; GRAIN SIZE; LATTICE PARAMETERS; PIEZOELECTRICITY; SCANDIUM COMPOUNDS; SILICON; SPUTTERING; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION