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Title: Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals

Fabricating photonic crystals (PhCs) on GaN based non-polar light emitting diodes (LEDs) is an effective way to increase light extraction and meanwhile to preserve or improve polarization ratio. In this work, a-plane GaN LEDs with two-dimensional PhCs were demonstrated. With the E // m polarized modes (which mean the optical polarization with the electric field parallel to m-axis) as the target of diffraction, we matched E//m modes to the photonic bands and aligned E//c modes to fall within the photonic band gap. The results show stronger E//m but weaker E//c mode diffractions on both c- and m-axes. At the vertical direction, the polarization ratio is enhanced from 45.8% for the planar device to 52.3% for the LEDs with PhCs.
Authors:
; ; ; ; ; ;  [1] ; ;  [2]
  1. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan (China)
  2. Department of Photonics and Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan (China)
Publication Date:
OSTI Identifier:
22275514
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ASYMMETRY; CRYSTALS; DIFFRACTION; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; GALLIUM NITRIDES; LIGHT EMITTING DIODES; PHOTONS; POLARIZATION; VISIBLE RADIATION