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Title: Estimation of the internal electric field inside (11-22) semipolar GaN/Al{sub 0.5}Ga{sub 0.5}N nanostructures and the radiative efficiency at low temperature

We report on time-integrated and resolved photoluminescence data on self-assembled semipolar (11-22) GaN nanostructures embedded in Al{sub 0.5}Ga{sub 0.5}N. It is confirmed that the internal electric field is reduced for semipolar (11-22) orientation. It is shown in particular that the value of the electric field is 450–500 kV/cm for this orientation. The photoluminescence decay time of excitons is used as a probe of the reduction of the internal electric field in the case of semipolar GaN nanostructures. The measured decays are not only controlled by radiative lifetimes, which depend on the fields inside GaN nanostructures, but also on the nonradiative escape of carriers through barriers. The correspondent decay time is found equal to 330 ps. By the study of the decay time as a function of the emission energy, we can determine the evolution of the internal quantum efficiency as a function of the nanostructures height (energy) and to have access to the nonradiative lifetime at low temperature.
Authors:
;  [1]
  1. Université de Nice Sophia Antipolis, 06108 Nice Cedex 2 (France)
Publication Date:
OSTI Identifier:
22275513
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM COMPOUNDS; ELECTRIC FIELDS; EXCITONS; GALLIUM NITRIDES; HETEROJUNCTIONS; LIFETIME; NANOSTRUCTURES; ORIENTATION; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; TEMPERATURE DEPENDENCE