skip to main content

Title: Hall mobility in tin iodide perovskite CH{sub 3}NH{sub 3}SnI{sub 3}: Evidence for a doped semiconductor

CH{sub 3}NH{sub 3}SnI{sub 3} is a metal halide perovskite that shows metallic conductivity over a wide temperature range, although ab initio calculations and optical absorption indicate that its band structure is consistent with that of an intrinsic semiconductor. Hall effect measurements of as-grown crystals give a hole concentration of about 9×10{sup 17} cm{sup −3} with rather high Hall mobility of about 200 cm{sup 2} V{sup −1} s{sup −1} at 250 K. Artificial hole doping enhances the electrical conductivity of the crystals without influencing mobility. These observations indicate that the electronic structure in stoichiometric CH{sub 3}NH{sub 3}SnI{sub 3} can be described as that of an intrinsic semiconductor with a wide valence band. This situation leads to metal-like conduction with even a trace amount of spontaneous hole doping in the as-grown crystal. - Graphical abstract: Hall effect measurements of as-grown CH{sub 3}NH{sub 3}SnI{sub 3} crystals give a hole concentration of about 9×10{sup 17} cm{sup −3}. Artificial hole doping enhances the electrical conductivity of the crystals without influencing mobility, indicating that the electronic structure of CH{sub 3}NH{sub 3}SnI{sub 3} can be described as that of an intrinsic semiconductor with a wide valence band. Display Omitted - Highlights: • Hole concentration in highly conductingmore » CH{sub 3}NH{sub 3}SnI{sub 3} was determined. • Hall mobility was not affected by artificial hole doping. • The electronic structure can be described as that of an intrinsic semiconductor.« less
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [1] ;  [3]
  1. Department of Chemistry, Graduate School of Science, Hokkaido University, Sapporo 060-0810 (Japan)
  2. CREST, Japan Science and Technology Agency (JST), Faculty of Science, Hokkaido University, Sapporo 060-0810 (Japan)
  3. (JST), Faculty of Science, Hokkaido University, Sapporo 060-0810 (Japan)
Publication Date:
OSTI Identifier:
22274068
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Solid State Chemistry; Journal Volume: 205; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; CRYSTALS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; HALL EFFECT; MOBILITY; PEROVSKITE; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE; TIN IODIDES; TRACE AMOUNTS