Insight into the mechanism of Sb promoted Cu(In,Ga)Se{sub 2} formation
Sb-doping has been demonstrated to be a new approach to promote Cu(In,Ga)Se{sub 2} (CIGS) thin film formation. To study the mechanism of Sb-promoted CIGS formation, we investigated the influence of Sb on the evolution of the critical intermediate Cu–Se phases, and found that Cu{sub 3}SbSe{sub 3} species was formed. Phase change of the as-prepared Cu–Se compounds at elevated temperature was determined using the differential scanning calorimetry analysis. For samples containing Sb, the melting decomposition occurred at 507.1 °C, along with aggregation of nanocrystals into a bulk, while the morphology of the sample without Sb barely changed after heating. This result suggests that the mobile Cu{sub 3}SbSe{sub 3} is likely the key intermediate responsible for Sb-promoted CIGS formation. Furthermore, we extended the scope of Sb-doping approach to solvothermal synthesis and CIGS nanocrystals were synthesized with significantly promoted kinetics in the presence of Sb. Based on these results, we propose the mechanism of Sb promoted CIGS formation. - Graphical abstract: Cu{sub 3}SbSe{sub 3} mobile phase is likely the key species to promote the formation of Cu(In,Ga)Se{sub 2}, and significantly promoting effect by Sb is also found in the synthesis of Cu(In,Ga)Se{sub 2} nanocrystals. Highlights: • In the presence of Sb, Cu{sub 3}SbSe{sub 3} is formed while synthesizing the essential intermediate Cu–Se compounds for Cu(In,Ga)Se{sub 2} materials. • Cu{sub 3}SbSe{sub 3} shows high mobility at elevated temperature. • Cu{sub 3}SbSe{sub 3} mobile phase is likely the key species to improve Cu(In,Ga)Se{sub 2} thin film formation. • A synthesis methodology is developed to produce Cu(In,Ga)Se{sub 2} nanocrystals with significantly promoted reaction kinetics.
- OSTI ID:
- 22274049
- Journal Information:
- Journal of Solid State Chemistry, Vol. 204; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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