Structural characterization and low-temperature physical properties of p-type single-crystal K{sub 8}Ga{sub 8.5}Sn{sub 37.5} grown by self-flux method
Single-crystal K{sub 8}Ga{sub 8.5}Sn{sub 37.5} was synthesized employing a self-flux method where Ga and Sn were used as fluxes. Single-crystal X-ray diffraction analyses revealed that this composition crystallizes in a cubic structure with the Pm3{sup ¯}n space group (number sign 223, a=11.9345(16) Å, V=1699.9(4) Å{sup 3}, Z=1, and R/wR=0.0187/0.0382). A large dynamic disorder and anisotropic atomic displacement parameters were observed for K atoms inside the larger polyhedra in the crystal structure of K{sub 8}Ga{sub 8.5}Sn{sub 37.5}. Electrical properties measurements indicate p-type conduction with onset of minority charge carrier conduction at temperatures above 270 K. - Graphical abstract: Single-crystal K{sub 8}Ga{sub 8.5}Sn{sub 37.5} was synthesized via a double-flux method where Ga and Sn were used as fluxes. Large disorder for K inside the larger polyhedra in the crystal structure of K{sub 8}Ga{sub 8.5}Sn{sub 37.5} was observed. Measurements of the electronic properties indicate p-type conduction with the onset of minority charge carrier conduction at temperatures above 270 K. Highlights: • Single-crystal K{sub 8}Ga{sub 8.5}Sn{sub 37.5} synthesized for the first time, and fully structurally characterized. • Large disorder for K inside the larger polyhedra in the crystal structure of K{sub 8}Ga{sub 8.5}Sn{sub 37.5.} • Electronic properties indicate p-type conduction with relatively low thermal conductivity.
- OSTI ID:
- 22274034
- Journal Information:
- Journal of Solid State Chemistry, Vol. 204; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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