Magneto-resistive coefficient enhancement observed around Verwey-like transition on spinel ferrites XFe{sub 2}O{sub 4} (X = Mn, Zn)
- Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, Av. Del Charro 450 norte, 32310 Ciudad Juárez (Mexico)
- Instituto de Magnetismo Aplicado (UCM-ADIF-CSIC), P.O. Box 155, 28230 Las Rozas (Spain)
- Centro de Investigación en Materiales Avanzados, Miguel de Cervantes 120, 31109 Chihuahua (Mexico)
Manganese and Zinc ferrites were prepared by solid state reaction. The resulting powders were pressed into pellets and heat treated at 1100 °C. The samples were characterized by using X-ray diffraction, pure phases of zinc ferrite (ZnFe{sub 2}O{sub 4}) and manganese ferrite (MnFe{sub 2}O{sub 4}) were obtained. Scanning electron microscopy images showed a good contact between particles. A drop of electrical resistance was found in both samples, MnFe{sub 2}O{sub 4} and ZnFe{sub 2}O{sub 4}, with values going from 2750 to 130 Ω and from 1100 to 55 Ω, respectively. Transition temperatures were determined to be T{sub V} = 225 K for MnFe{sub 2}O{sub 4} and T{sub V} = 130 K for ZnFe{sub 2}O{sub 4}. Magnetoresistance measurements were carried out in the temperature range where R showed the transition, defined as the Verwey-like transition temperature range, ΔT{sub V}. No magnetoresistive effect was observed out of it. The magnetoresistive coefficient (MRC) observed at ΔT{sub V} reached its maximum values of 1.1% for MnFe{sub 2}O{sub 4} and 6.68% for ZnFe{sub 2}O{sub 4}. The differences between MRC values are related to the divalent metal element used. Finally, the magnetoresistive response indicates that the electrical transition observed is strongly influencing the magnetoresistance; where the underlying responsible for this behavior could be a charge reordering occurring at the Verwey-like transition temperature.
- OSTI ID:
- 22273965
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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