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Title: Determination of g-factor in a quantum well channel with a strong Rashba effect

Using the Shubnikov−de Haas oscillation measurement, the g-factor of carriers in a strong Rashba system is observed. To determine g-factor of carriers in the InAs quantum well channel with a strong Rashba effect, the magnetic fields are simultaneously applied along the in-plane direction and the perpendicular direction. The perpendicular field drives the oscillation of conductance for measuring Rashba spin orbit interaction and the in-plane field parallel to the Rashba field interacts with Rashba effect and modifies the intrinsic Rashba parameter. The total field inside the channel is a combination of the Rashba field and the in-plane field, so the modification of Rashba parameter gives a g-factor value of ∼13 in our system.
Authors:
;  [1] ;  [2] ; ;  [1]
  1. Spin Convergence Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
  2. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22273949
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE CARRIERS; INDIUM ARSENIDES; LANDE FACTOR; L-S COUPLING; MAGNETIC FIELDS; MODIFICATIONS; OSCILLATIONS; QUANTUM WELLS