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Title: Bimodal switching field distributions in all-perpendicular spin-valve nanopillars

Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K). This result is inconsistent with a model of thermal activation over a single perpendicular anisotropy barrier. The correlation between antiparallel to parallel and parallel to antiparallel switching fields increases to nearly 50% at low temperatures. This reflects random fluctuation of the shift of the free layer hysteresis loop between two different magnitudes, which may originate from changes in the dipole field from the polarizing layer. The magnitude of the loop shift changes by 25% and is correlated to transitions of the spin-valve into an antiparallel configuration.
Authors:
;  [1] ; ;  [2] ;  [3] ;  [4]
  1. Department of Physics, New York University, New York, New York 10003 (United States)
  2. HGST San Jose Research Center, San Jose, California 95135 (United States)
  3. Institut Jean Lamour, UMR CNRS 7198 Université de Lorraine, Nancy (France)
  4. CMRR, University of California at San Diego, La Jolla, California 92093 (United States)
Publication Date:
OSTI Identifier:
22273929
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANISOTROPY; CORRELATIONS; DIPOLES; FLUCTUATIONS; HYSTERESIS; NANOSTRUCTURES; POLARIZATION; SPIN; TEMPERATURE DEPENDENCE; VALVES